Characterization of lanthanum lutetium oxide thin films grown by atomic layer deposition as an alternative gate dielectric
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Available online 17 August 2008 LaLuO3 thin films have bee
منابع مشابه
The influence of process parameters and pulse ratio of precursors on the characteristics of La1 − xAlxO3 films deposited by atomic layer deposition
The influence of processing parameters of aluminum oxide (Al2O3) and lanthanum oxide (La2O3) gate dielectric is investigated. Trimethylaluminum (TMA) and tris(isopropylcyclopentadienyl) lanthanum [La(iPrCp)3] were used as precursors separately, and H2O was used as oxidant. The ultra-thin La1 - x Al x O3 gate dielectric films are deposited on p-type silicon substrates by atom layer deposition (A...
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تاریخ انتشار 2008